Electron devices / V.Dulin

By: Publication details: Moscow, MIR Publishers : 1980 .Description: 424 p .: ill .: 24 cmDDC classification:
  • 22 621.38 KUZ
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CONTENT

Part One. Electron tubes
Chapter One. A general outline and physical principles of electron tubes
1-1 Classification and design of electron tubes
1-2 Operating conditions, ratings and characteristics of electron tubes
1-3 Electron emission
1-4 Thermionic cathods
etc.

Chapter Two. Vacuum Diodes
2-1 Physical processes in the vacuum Diode
2-2 Plate current as a fuction of plate voltage
2-3 Static characteristics of the Vacuum Diode
2-4 The load Line
etc.

Chapter Three. Vacuum Triodes
3-1 Physical processes in the Vacuum triode
3-2 Static characteristics of the vacuum triode
3-3 Parameters and ratings of the vacuum triode
3-4 Operation of the Vacuum triode under load
etc.

Chapter Four. Multielectrode and special-purpose tubes
4-1 Tetrodes and Pentodes, physical processes in multielectrode tubes
4-2 Static characteristics of multielectrode tubes
4-3 Parameters of Multielectrode tubes
4-4 Construction and types of tetrodes and Pentodes
etc.

Chapter Five. Operational Hints for vacuum tubes
5-1 Tube noise
5-2 Equivalent circuits of vacuum tubes
5.3 Approximation of tube characteristics
5-4 Reliability of vacuum tubes, operating conditions and ratings

Chapter Six. Photoelectric devices
6-1 General
6-2 Photoelectric emission
6-3 Phototubes
6-4 Photomultiplier tubes

etc.

PART TWO. SEMICONDUCTOR DEVICES
Chapter Nine.
A General outline and physical principles of Semiconductor devices
9-1 Classification and design of Semiconductor devices
9-2 Energy diagrams of semiconductors
9-3 Generation and recombination of free charge carriers in Semiconductors
9-4 Particle ststistics as applied to semiconductorr
etc.

Chapter Ten. Junction effects
10-1. Semiconductor junctions
10-2. The symmetrical p-n jUNCTION
10-3. Foward and reverse biasing
10-4 Types of Junction
etc.

Chapter Eleven Crystal Diodes
11-1 Design and classification of crystal Diodes
11-2 Physical processes in the crystal Diodes
11-3 The Volt- Ampere characteristics of the real Diode
11-4 The main parameters of crystal Diodes
etc.

Chapter Twelve. Bipolar Transistors
12-1 Design and principle of operation
12-2 Physical processes in the transistor and its parameters
12-3 The transistor as a two port
12-4 Static ( D.C. ) characteristics of the transistor
etc.

Chapter Thirteen. Field - Effect translators
13-1 General
13-2 Junction Field- effect transistors
13-3 Insulated- Gate Field-effect transistors
13-4 FET Parameters

Chapter Fourteen. Photoelectric and Light-emitting semiconductor devices
14-1 General
14-2 Absorption of light by Semiconductors
14-3 The photoconductive effects
14-4 Photoresistors
etc.

Chapter Fifteen Miscellaneous Semiconductor devices
15-1 Negative resistance devices
15-2 The Unijunction transistor
15-3 Thyristors
15-4 The Tunnel Diode
etc.

Chapter Sixteen. Applications of Semiconductor devices
16-1 Noise in Semiconductor Devices
16-2 Linear approximation of Diode Characteristics and Diode equivalent circuits
16-3 Equivalent circuits for Bipolar Transistors
16-4 Linear approximation of Characteristics for a Bipolar Transistors
etc.

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