Semiconductor physics and devices : basic principles / Donald A. Neamen.

CHAPTER 1: THE CRYSTAL STRUCTURE OF SOLIDS
1.1 Semiconductor Materials
1.2 Types of Solids
1.3 Space Lattices
1.4 Atomic Bonding
1.5 Imperfections and Impurities in Solids
Etc.

CHAPTER 2: INTRODUCTION TO QUANTUM MECHANICS
2.1 Principles of Quantum Mechanics
2.2 Schrodinger's Wave Equation
2.3 Applications of Schrodinger's Wave Equation
2.4 Extensions of the Wave Theory to Atoms
2.5 Summary
Etc.

CHAPTER 3: INTRODUCTION TO THE QUANTUM THEORY OF SOLIDS
3.1 Allowed and Forbidden Energy Bands
3.2 Electrical Conduction in Solids
3.3 Extensions to Three Dimensions
3.4 Density of States Function
3.5 Statistical Mechanics
Etc.

CHAPTER 4: THE SEMICONDUCTOR IN EQUILIBRIUM
4.1 Charge Carriers in Semiconductors
4.2 Dopant Atoms and Energy Levels
4.3 The Extrinsic Semiconductor
4.4 Statistics of Donors and Acceptors
4.5 Charge Neutrality
Etc.

CHAPTER 5:CARRIER TRANSPORT PHENOMENA
5.1 Carrier Drift
5.2 Carrier Diffusion
5.3 Graded impurity Distribution
5.4 The Hall Effect

CHAPTER 6: NONEQUILIBRIUM EXCESS CARRIERS IN SEMICONDUCTORS
6.1 Carrier Generation and Recombination
6.2 Characteristics
6.3 Ambipolar Transport
6.4 Quasi-Fermi Energy Levels
6.5 Excess-Carrier Lifetime
6.6 Surface Effects

CHAPTER 7 :THE PN JUNCTION
7.1 Basic Structure of the pn Junction
7.2 Zero Applied Bias
7.3 Reverse Applied Bias
7.4 Non-uniformly Doped Junctions

CHAPTER 8: THE PN JUNCTION DIODE
8.1 pn Junction Current
8.2 Small-signal Model of the pn Junction
8.3 Generation-Recombination Currents
8.4 Junction Breakdown
8.5 Charge Storage and Diode Transients
Etc.

CHAPTER 9: METAL-SEMICONDUCTOR AND SEMICONDUCTOR HETEROJUNCTIONS
9.1 The Schottky Barrier Diode
9.2 Metal-Semiconductor Ohmic Contacts
9.3 Hetero-junctions
Etc.

CHAPTER 10: THE BIPOLAR TRANSISTOR
10.1 The Bipolar Transistor Actions
10.2 Minority Carrier Distribution
10.3 Low-Frequency Common-Base Current Gain
10.4 Non-ideal Effects
10.5 Equivalent Circuit Models
Etc.

CHAPTER 11: FUNDAMENTALS OF THE METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR
11.1 The-Two Terminal MOS Structure
11.2 Capacitance-Voltage Characteristics
11.3 The Basic MOSFET Operation
11.4 Frequency Limitations
11.5 The CMOS Technology
Etc.

CHAPTER 12: METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT
TRANSISTOR: ADDITIONAL CONCEPTS
12.1 Non-ideal Effects
12.2 MOSFET Scaling
12.3 Threshold Voltage Modifications
12.4 Additional Electrical Characteristics
12.5 Radiation and Hot-Electron Effects
Etc.

CHAPTER 13: THE JUNCTION FIELD-EFFECT TRANSISTOR
13.1 JFET Concepts
13.2 The Device Characteristics
13.3 Non-ideal Effects
13.4 Equivalent Circuit and Frequency Limitations
13.5High Electron Mobility Transistor

CHAPTER 14: OPTICAL DEVICES
14.1 Optical Absorption
14.2 Solar Cells
14.3 Photo-detectors
14.4 Photoluminescence and Electroluminescence
14.5 Light Emitting Diodes
Etc.

CHAPTER 15: SEMICONDUCTOR POWER DEVICES
15.1 Power Bipolar Transistors
15.2 Power MOSFETs
15.3 Heat Sinks and Junction Temperature
15.4 The Thyristor

Includes bibliographical references and index p. 731-746