Electron devices /
V.Dulin
- Moscow, MIR Publishers : 1980 .
- 424 p .: ill .: 24 cm.
CONTENT
Part One. Electron tubes Chapter One. A general outline and physical principles of electron tubes 1-1 Classification and design of electron tubes 1-2 Operating conditions, ratings and characteristics of electron tubes 1-3 Electron emission 1-4 Thermionic cathods etc.
Chapter Two. Vacuum Diodes 2-1 Physical processes in the vacuum Diode 2-2 Plate current as a fuction of plate voltage 2-3 Static characteristics of the Vacuum Diode 2-4 The load Line etc.
Chapter Three. Vacuum Triodes 3-1 Physical processes in the Vacuum triode 3-2 Static characteristics of the vacuum triode 3-3 Parameters and ratings of the vacuum triode 3-4 Operation of the Vacuum triode under load etc.
Chapter Four. Multielectrode and special-purpose tubes 4-1 Tetrodes and Pentodes, physical processes in multielectrode tubes 4-2 Static characteristics of multielectrode tubes 4-3 Parameters of Multielectrode tubes 4-4 Construction and types of tetrodes and Pentodes etc.
Chapter Five. Operational Hints for vacuum tubes 5-1 Tube noise 5-2 Equivalent circuits of vacuum tubes 5.3 Approximation of tube characteristics 5-4 Reliability of vacuum tubes, operating conditions and ratings
PART TWO. SEMICONDUCTOR DEVICES Chapter Nine. A General outline and physical principles of Semiconductor devices 9-1 Classification and design of Semiconductor devices 9-2 Energy diagrams of semiconductors 9-3 Generation and recombination of free charge carriers in Semiconductors 9-4 Particle ststistics as applied to semiconductorr etc.
Chapter Ten. Junction effects 10-1. Semiconductor junctions 10-2. The symmetrical p-n jUNCTION 10-3. Foward and reverse biasing 10-4 Types of Junction etc.
Chapter Eleven Crystal Diodes 11-1 Design and classification of crystal Diodes 11-2 Physical processes in the crystal Diodes 11-3 The Volt- Ampere characteristics of the real Diode 11-4 The main parameters of crystal Diodes etc.
Chapter Twelve. Bipolar Transistors 12-1 Design and principle of operation 12-2 Physical processes in the transistor and its parameters 12-3 The transistor as a two port 12-4 Static ( D.C. ) characteristics of the transistor etc.
Chapter Thirteen. Field - Effect translators 13-1 General 13-2 Junction Field- effect transistors 13-3 Insulated- Gate Field-effect transistors 13-4 FET Parameters
Chapter Fourteen. Photoelectric and Light-emitting semiconductor devices 14-1 General 14-2 Absorption of light by Semiconductors 14-3 The photoconductive effects 14-4 Photoresistors etc.
Chapter Fifteen Miscellaneous Semiconductor devices 15-1 Negative resistance devices 15-2 The Unijunction transistor 15-3 Thyristors 15-4 The Tunnel Diode etc.
Chapter Sixteen. Applications of Semiconductor devices 16-1 Noise in Semiconductor Devices 16-2 Linear approximation of Diode Characteristics and Diode equivalent circuits 16-3 Equivalent circuits for Bipolar Transistors 16-4 Linear approximation of Characteristics for a Bipolar Transistors etc.